Shimamoto Y | Hitachi Ltd. Tokyo Jpn
スポンサーリンク
概要
関連著者
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Shimamoto Yasuhiro
Central Research Laboratory Hitachi Ltd.
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Shimamoto Y
Hitachi Ltd. Tokyo Jpn
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Matsui Yasushi
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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Matsui Y
Assoc. Super‐advanced Electronics Technol. (aset) Kanagawa Jpn
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Matsui Y
Nims Tsukuba Jpn
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MATSUI Yuichi
Central Research Laboratory, Hitachi, Ltd.
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SHIMAMOTO Yasuhiro
Central Research Laboratory, Hitachi, Ltd.
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Matsui Y
Central Research Laboratory Hitachi Ltd.
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Muto Y
The Institute For Materials Research Tohoku University
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Hiratani M
Central Research Laboratory Hitachi Ltd.
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Hiratani M
Central Research Laboratory Hitachi Ltd
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Hiratani Masahiko
Central Research Laboratory Hitachi Ltd.
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Fujisaki Y
R&d Association For Future Electron Devices
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Nabatame Toshihide
Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva
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Nabatame T
Aist Tsukuba Jpn
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Nabatame Toshihide
Mirai-aset Advanced Industrial Science And Technology (aist)
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Nabatame Toshihide
Hitachi Research Laboratory Hitachi Ltd.
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FUJISAKI Yoshihisa
Central Research Laboratory, Hitachi Ltd.
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Miura H
Hitachi Ltd. Tsuchiura‐shi Jpn
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Fujisaki Yoshihisa
Central Research Laboratory Hitachi Limited
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
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Fujisaki Yoshihisa
R&D Association for Future Electron Devices
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Suzuki T
Hitachi Research Laboratory Hitachi Ltd.
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Suzuki T
Nagaoka Univ. Technol.
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SUZUKI Takaaki
Hitachi Research Laboratory of Hitachi Ltd.
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Kimura Shingo
Department Of Physics School Of General Education Iwate Medical University
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Imagawa Kazushige
Central Research Laboratory, Hitachi, Ltd.
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Suzuki Tatsuya
Graduate School Of Engineering Yokohama National University
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MIKI Hiroshi
Department of Pathology, Kagawa Medical University
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OHJI Yuzuru
Semiconductor Leading Edge Technologies, Inc. (Selete)
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ASANO Isamu
ELPIDA MEMORY, Inc.
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Kimura S
Ntt Photonics Lab. Kanagawa Jpn
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MATSUI Yoshio
Environmental Pollution Research Institute of Nagoya City
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KADOSHIMA Masaru
Hitachi Research Laboratory, Hitachi Ltd.
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ASANO Isamu
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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FUJIWARA Tetsuo
Hitachi Research Laboratory, Hitachi Ltd.
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KIMURA Shinichiro
Central Research Laboratory, Hitachi, Ltd
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Kimura S
Central Research Laboratory Hitachi Ltd.
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Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Kadoshima Masaru
Hitachi Research Laboratory Hitachi Ltd.
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Miki Hiroshi
Central Research Laboratory Hitachi Ltd.
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Kushida‐abdelghafar K
The Authors Are With Central Research Laboratory Hitachi Ltd.
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Fujiwara Tetsuo
Hitachi Research Laboratory Hitachi Ltd.
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CHEN Po-ching
central Research Laboratory, Hitachi, Ltd.
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FUJISAKI Yoshihisa
The authors are with Central Research Laboratory, Hitachi Ltd.
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KUSHIDA-ABDELGHAFAR Keiko
The authors are with Central Research Laboratory, Hitachi Ltd.
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MIKI Hiroshi
The authors are with Central Research Laboratory, Hitachi Ltd.
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SHIMAMOTO Yasuhiro
The authors are with Central Research Laboratory, Hitachi Ltd.
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Chen Po-ching
Central Research Laboratory Hitachi Ltd.
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Kimura Shinichiro
Central Research Laboratory Hitachi Ltd.
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Asano I
Elpida Memory Inc. Kanagawa Jpn
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MATUSI Yasuji
Product Development Laboratory, Mitsubishi Electric Corporation
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Imagawa K
Central Research Laboratory Hitachi Ltd.
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Imagawa Kazushige
Central Research Laboratory Hitachi Ltd.
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Nabatane Toshihide
Hitachi Research Laboratory, Hitachi Ltd.
著作論文
- Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
- Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere
- Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate
- Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba, Sr) TiO_3 Capacitors
- Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O_3 Thin Film Capacitors with IrO_2 Top Electrode(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)