Nabatame T | Aist Tsukuba Jpn

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著作論文

Anomalous positive V_ shift in HfAlO_x MOS gate stacks
Comparison of Transport Properties between Tl-(1223) and Tl-(2223) Phases of Tl-Ba-Ca-Cu-O Systems
The Anisotropy of Transport Critical Current Densities in Tl_2Ba_2Ca_2Cu_3O_x Thin Films under Magnetic Fields up to 20 T
Properties of Tl_2Ba_2Ca_2Cu_3O_x Thin Films with a Critical Temperature of 122 K Prepared by Excimer Laser Ablation
Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al_2O_3 Films using ^O Isotope
Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere
Magnetic Field Dependence of Critical Current Density of Polycrystalline Tl-2223 Wire
Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
Si-Capped Annealing of HfO_2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion
The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
Theoretical analysis of the Fermi level pinning in HfO_2/Si system induced by the interface defect states
Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface
Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2
Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)_3 Dissolved with Tetrahydrofuran Solvent : Surfaces, Interfaoes, and Films
Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
High Temperature Annealing-Induced Phase Transformation Characteristic of Nitrogen-Rich Hafnium Nitride Films
Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD
Fabrication of Hf(C)N Films on SiO_2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application

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