Tominaga Koji | Mirai-aset Aist
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概要
関連著者
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Tominaga Koji
Mirai-aset Aist
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Yasuda Naoki
Mirai-aset Aist
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IWAMOTO Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Nabatame Toshihide
Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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MIGITA Shinji
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scie
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Kadoshima Masaru
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Tominaga Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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AKIYAMA Koji
MIRAI-ASET
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IKEDA Minoru
MIRAI-ASET
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KADOSHIMA Masaru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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MISE Nobuyuki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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SATAKE Hideki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Satake Hideki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Toriumi Akira
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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岡田 健治
半導体MIRAI-ASET
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Ohta Akio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Nabatame T
Aist Tsukuba Jpn
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Nabatame Toshihide
Mirai-aset Advanced Industrial Science And Technology (aist)
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Okada K
Yamaguchi Univ. Yamaguchi Jpn
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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Yasuda Tetsuji
Mirai Project Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industria
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岡田 健治
松下電器産業(株)
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MIZUBAYASHI Wataru
MIRAI-ASRC
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OKADA Kenji
MIRAI-ASET, AIST
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HORIKAWA Tsuyoshi
MIRAI-ASRC, AIST
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HISAMATSU Hirokazu
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Morita Yukinori
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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MIYATA Noriyuki
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and
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YAMAMOTO Katsuhiko
MIRAI-ASET, AIST
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Hisamatsu Hirokazu
Mirai-aset Aist
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Hayashi T
Mirai-asrc-aist
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Horikawa Tsuyoshi
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Satake Hideki
Mirai-aset Aist
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Iwamoto Kunihiko
Mirai-aset
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Toriumi Akira
Mirai-asrc Aist
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Yamamoto Katsuhiko
Mirai-aset Aist
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Horikawa Tsuyoshi
Mirai-asrc Aist
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Nabatame Toshihide
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Migita Shinji
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Migita Shinji
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Nishimura Tomoaki
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Mizubayashi Wataru
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Akiyama Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Ikeda Minoru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Iwamoto Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
著作論文
- Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2 Dielectrics
- Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
- Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics
- Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms