Toriumi Akira | The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar

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著作論文

Anomalous positive V_ shift in HfAlO_x MOS gate stacks
Study of La Concentration Dependent V_ Shift in Metal/HfLaOx/Si Capacitors
Performance and Degradation in Single Grain-size Pentacene Thin-Film Transistors
Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
Mobility Variations in Mono- and Multi-Layer Graphene Films
Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
Origin of Structural Phase Transformation of SiO_2-doped HfO_2
Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
Excellent Leakage Current of Crystallized Silicon-Doped HfO_2 Films Down to Sub-nm EOT
Thermally Robust Y_2O_3/Ge MOS Capacitors
Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon
Design Methodology for La_2O_3-Based Ternally Higher-κ Dielectrics
A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS
Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing
Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification
Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount of Si
Stable Observation of the Evolution of Leakage Spots in HfO_2/SiO_2 stacked structures by UHV-C-AFM
Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by the Time-Dependent OCP Measurement
Advantages of Ge (111) Surface for High Quality HfO_2/Ge Interface
New Method for Characterizing Dielectric Properties of High-k Films with Time-Dependent Open-Circuit Potential Measurement
Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al_2O_3 Films using ^O Isotope
Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
Si-Capped Annealing of HfO_2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion
The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
Theoretical analysis of the Fermi level pinning in HfO_2/Si system induced by the interface defect states
Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface
Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2
Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy
Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
Permittivity Enhancement of Hf_Si_xO_2 Film with High Temperature Annealing
Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
Silicon Planar Esaki Diode Operating at Room Temperature
SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3

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