Yokoyama Takamichi | Department Of Chemistry Nagaoka University Of Technology
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概要
関連著者
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Yokoyama Takamichi
Department Of Chemistry Nagaoka University Of Technology
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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Park Chang
Department Of Anatomic Pathology Chonnam National University Medical School
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Nishimura Tomonori
Department Of Chemistry Faculty Of Science Okayama University
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Park Chang
Department of Chemical and Biochemical Engineering, Dongguk University
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KITA Koji
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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TORIUMI Akira
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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Toriumi Akira
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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YOKOYAMA Takamichi
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Park Chang
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Toriumi Akira
Department Of Materials Engineering The University Of Tokyo
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Toriumi Akira
Mirai-asrc Aist
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Yokoyama Takamichi
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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NISHIMURA Tomonori
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Kita Koji
Department Of Materials Engineering The University Of Tokyo
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NAGASHIO Kosuke
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Nagashio Kosuke
Department Of Materials Engineering The University Of Tokyo
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Nishiguchi I
Department Of Chemistry Nagaoka University Of Technology
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Nishiguchi Ikuzo
Department Of Chemistry Nagaoka University Of Technology
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Maekawa H
Department Of Chemistry Nagaoka University Of Technology
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Maekawa Hirofumi
Department Of Chemistry Faculty Of Engineering Nagaoka University Of Technology
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Maekawa Hirofumi
Department Of Chemistry Nagaoka University Of Technology
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KUWAHARA Takeshi
Department of Chemistry, Nagaoka University of Technology
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KYODA Makoto
Department of Chemistry, Nagaoka University of Technology
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Kyoda Makoto
Department Of Chemistry Nagaoka University Of Technology
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Kuwahara Takeshi
Department Of Chemistry Nagaoka University Of Technology
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Kita Koji
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Toriumi Akira
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Nishiguchi Ikuzo
Department of Chemical Technology, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Nishimura Tomonori
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yokoyama Takamichi
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yokoyama Takamichi
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
著作論文
- Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
- Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
- Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
- Mg-Promoted Regioselective Carbon-Silylation of α-Phosphorylacrylate Derivatives
- Oxygen-Related Degradation Mechanisms for On- and Off-States of Perfluoropentacene Thin-Film Transistors
- Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation