Nagashio Kosuke | Department Of Materials Engineering The University Of Tokyo
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概要
関連著者
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Nagashio Kosuke
Department Of Materials Engineering The University Of Tokyo
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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Nishimura Tomonori
Department Of Chemistry Faculty Of Science Okayama University
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Lee Choong
Department Of Anatomy And Cell Biology College Of Veterinary Medicine And Bk21 Program For Veterinar
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Toriumi Akira
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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NAGASHIO Kosuke
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Toriumi Akira
Department Of Materials Engineering The University Of Tokyo
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Toriumi Akira
Mirai-asrc Aist
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KITA Koji
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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TORIUMI Akira
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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TABATA Toshiyuki
Department of Materials Engineering, School of Engineering, The University of Tokyo
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NISHIMURA Tomonori
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Wang Sheng
Department Of Applied Chemistry & Biotechnology Fukui University
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Kita Koji
Department Of Materials Engineering The University Of Tokyo
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Takahashi Toshitake
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Lee Choong
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Zhu Li
Department Of Agriscience And Bioscience Tokyo University Of Agriculture And Technology
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Wang Sheng
Department Of Materials Engineering The University Of Tokyo
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Zhao Dan
Department Of Dermatology The 2nd Affiliated Hospital Of Dalian Medical University
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Kita Koji
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Toriumi Akira
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Nishimura Tomonori
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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WANG Sheng
Department of Occupational Health, School of Public Health, Beijing University
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Park Chang
Department of Chemical and Biochemical Engineering, Dongguk University
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LEE Choong
Department of Anatomy and Cell Biology, College of Veterinary Medicine and BK21 Program for Veterina
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Park Chang
Department Of Anatomic Pathology Chonnam National University Medical School
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SAKATA Shuichi
Department of Materials Engineering, School of Engineering, The University of Tokyo
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YOKOYAMA Takamichi
Department of Materials Engineering, School of Engineering, The University of Tokyo
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ZHU Li
Department of Immunology, Institute of Basic Medical Sciences, Chinese Academy of Medical Sciences a
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Park Chang
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Sakata Shuichi
Institute Of Industrial Science And Institute For Nano Quantum Information Electronics University Of
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Sakata Shuichi
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Zhu Li
Department Of Materials Engineering The University Of Tokyo
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Yokoyama Takamichi
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Yokoyama Takamichi
Department Of Chemistry Nagaoka University Of Technology
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Zhu Li
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Zhao Dan
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Hibino Shinya
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Wang Sheng
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Koji Kita
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Toriumi Akira
Department of Materials Engineering, The University of Tokyo
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TORIUMI Akira
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Nagashio Kosuke
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Kosuke Nagashio
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Cheng Guo
College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China
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Tomonori Nishimura
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Akira Toriumi
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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LEE Choong
Department of Materials Engineering, School of Engineering, The University of Tokyo
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NAGASHIO Kosuke
Department of Materials Engineering, The University of Tokyo
著作論文
- Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- Mobility Variations in Mono- and Multi-Layer Graphene Films
- Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
- Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
- Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy
- Interfacial Dipole at High-$k$ Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics
- Isotope Tracing Study of GeO Desorption Mechanism from GeO2/Ge Stack Using 73Ge and 18O
- Junctionless Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate
- High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
- Density-of-states limited contact resistance in graphene field-effect transistors (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge MetalOxideSemiconductor Field-Effect Transistors
- Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
- Step and Terrace Formation on Ge(111) Surface in H? Annealing
- Counter Dipole Layer Formation in Multilayer High-k Gate Stacks
- Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks
- Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction
- Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
- Oxidation Rate Reduction of Ge with O_2 Pressure Increase
- Step and Terrace Formation on Ge(111) Surface in H_2 Annealing