Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks
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概要
- 論文の詳細を見る
- 2012-09-25
著者
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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TABATA Toshiyuki
Department of Materials Engineering, School of Engineering, The University of Tokyo
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NAGASHIO Kosuke
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Nagashio Kosuke
Department Of Materials Engineering The University Of Tokyo
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TORIUMI Akira
Department of Materials Engineering, School of Engineering, The University of Tokyo
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