Experimental Evidence for Invalidity of Matthiessen's Rule for MOS Inversion Layer Mobility Analysis through Hall Factor Measurement
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
-
KITA Koji
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
-
TORIUMI Akira
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
-
Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
-
Toriumi Akira
Department Of Materials Engineering School Of Engineering The University Of Tokyo
-
Toriumi Akira
Department Of Applied Physics University Of Tokyo
-
IRIE Hiroshi
Department of Materials Engineering, School of Engineering, The University of Tokyo
-
Irie Hiroshi
Department Of Anatomy Teikyo University School Of Medicine
-
Irie Hiroshi
Department Of Materials Engineering School Of Engineering The University Of Tokyo
関連論文
- Anomalous positive V_ shift in HfAlO_x MOS gate stacks
- Study of La Concentration Dependent V_ Shift in Metal/HfLaOx/Si Capacitors
- Performance and Degradation in Single Grain-size Pentacene Thin-Film Transistors
- Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
- Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- Mobility Variations in Mono- and Multi-Layer Graphene Films
- Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
- A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
- Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
- Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
- Origin of Structural Phase Transformation of SiO_2-doped HfO_2
- Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
- Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
- Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
- Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
- Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
- Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
- Excellent Leakage Current of Crystallized Silicon-Doped HfO_2 Films Down to Sub-nm EOT
- Thermally Robust Y_2O_3/Ge MOS Capacitors
- Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon
- Experimental Evidence for Invalidity of Matthiessen's Rule for MOS Inversion Layer Mobility Analysis through Hall Factor Measurement
- TiO_2 Photocatalysis : A Historical Overview and Future Prospects
- Myolipoma of the retroperitoneum
- Design Methodology for La_2O_3-Based Ternally Higher-κ Dielectrics
- A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS
- Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing
- Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification
- Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount of Si
- Stable Observation of the Evolution of Leakage Spots in HfO_2/SiO_2 stacked structures by UHV-C-AFM
- Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by the Time-Dependent OCP Measurement
- Advantages of Ge (111) Surface for High Quality HfO_2/Ge Interface
- New Method for Characterizing Dielectric Properties of High-k Films with Time-Dependent Open-Circuit Potential Measurement
- Pressure Dependence of Direct Band Gap at Γ Point in Solids
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
- Indications and Proplems of Coronary Artery Bypass Grafting Without Cardiopulmonary Bypass
- Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy
- Hepatitis B and C virus infection and p53 mutations in human hepatocellular carcinoma in Harbin, Heilongjian Province, China
- INFLUENCE OF DIABETES MELLITUS ON COTONARY ARTERY BYPASS GRAFT SURGERY
- Permittivity Enhancement of Hf_Si_xO_2 Film with High Temperature Annealing
- Novel Biosensor for the Rapid Measurement of Estrogen Based on a Ligand-Receptor Interaction
- Interfacial Dipole at High-$k$ Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics
- Severe infantile myotubular myopathy with complete atrioventricular block
- From Ballistic to Coulomb Blockade Transport in Si Metal Oxide Semiconductor Field Effect Transisters
- Isotope Tracing Study of GeO Desorption Mechanism from GeO2/Ge Stack Using 73Ge and 18O
- Junctionless Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate
- Colon Diseases in Recent Years in Japan : From the Viewpoint of a Pathologist
- Incommensurate Periodic Lattice Distortion Perpendicular to the Layer in 1T-VSe_2
- Engineering of a Novel Oral Herpesvirus Vaccine Using Gene Therapy
- Bioaffinity Sensor to Anti-DNA Antibodies Using DNA Modified Au Electrode
- High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
- Delayed Effect of Thorotrast Deposition in Humans : Carcinogenesis and Suppression of the Reticuloendothelial System
- C-1-3 The Structure of Bowdensine(Alkaloids and alkaloid biosynthesis)
- Density-of-states limited contact resistance in graphene field-effect transistors (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge MetalOxideSemiconductor Field-Effect Transistors
- Internal Photoemission over HfO2 and Hf(1-x)SixO2 High-$k$ Insulating Barriers: Band Offset and Interfacial Dipole Characterization
- Higher-k Scalability and Leakage Current Reduction of SiO2-Doped HfO2 in Direct Tunneling Regime
- Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
- Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics
- Counter Dipole Layer Formation in Multilayer High-k Gate Stacks
- Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks
- Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction
- Oxygen-Related Degradation Mechanisms for On- and Off-States of Perfluoropentacene Thin-Film Transistors
- Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
- Study of La-Induced Flat Band Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors
- Suppression of Leakage Current and Moisture Absorption of La2O3 Films with Ultraviolet Ozone Post Treatment
- TiO2 Photocatalysis: A Historical Overview and Future Prospects
- Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation
- Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
- Oxidation Rate Reduction of Ge with O_2 Pressure Increase
- Observation of the Creation and Annihilation of Local Current Paths in HfO2 Thin Films on Pt by Ultrahigh-Vacuum Conductive Atomic Force Microscopy: Evidence of Oxygen Spill Over during the Forming Process
- Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing
- Step and Terrace Formation on Ge(111) Surface in H_2 Annealing