Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor

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概要

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• The intrinsic channel properties of monolayer and multilayer graphene were systematically investigated as a function of layer number by the exclusion of contact resistance using four-probe measurements. We show that the continuous change in normalized sheet resistivity from graphite to a bilayer graphene is governed by one unique property, i.e., the band overlap, which markedly increases from 1 meV for a bilayer graphene to 11 meV for eight layers and eventually reaches 40 meV for graphite. The monolayer graphene, however, showed a deviation in temperature dependence due to a peculiar linear dispersion. Additionally, contact resistivity was extracted for the case of typical Cr/Au electrodes. The observed high contact resistivity, which varies by three orders of magnitude (from ${\sim}10^{3}$ to $10^{6}$ $\Omega$ μm), might significantly mask the outstanding performance of the monolayer graphene channel, suggesting its importance in future research.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-05-25

著者

• Kita Koji

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Nagashio Kosuke

  Department Of Materials Engineering The University Of Tokyo

• Nishimura Tomonori

  Department Of Chemistry Faculty Of Science Okayama University

• Koji Kita

  Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Kosuke Nagashio

  Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Tomonori Nishimura

  Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Akira Toriumi

  Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Kita Koji

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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