Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• KITA Koji

  Department of Materials Science, Graduate School of Engineering, The University of Tokyo

• KYUNO Kentaro

  Department of Materials Science, Graduate School of Engineering, The University of Tokyo

• TORIUMI Akira

  Department of Materials Science, Graduate School of Engineering, The University of Tokyo

• Kita Koji

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi A

  Univ. Tokyo Tokyo Jpn

• Toriumi Akira

  The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar

• Toriumi Akira

  Advanced Lsi Technology Toshiba Corporation

• Toriumi Akira

  Department Of Applied Physics University Of Tokyo

• Kyuno Kentaro

  Institute Of Industrial Science University Of Tokyo

• SHIMIZU Haruka

  Department of Materials Science, School of Engineering, The University of Tokyo

• Kita Koji

  Department Of Materials Engineering The University Of Tokyo

• 弓野 健太郎

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• 弓野 健太郎

  東大教養

• Shimizu Haruka

  Department Of Materials Science School Of Engineering The University Of Tokyo

• Kyuno Kentaro

  Department Of Materials Science Shibaura Institute Of Technology

• Toriumi Akira

  Mirai-asrc Aist

• Kyuno Kentaro

  Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Kita Koji

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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