Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-02-25
著者
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KITA Koji
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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TORIUMI Akira
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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NISHIMURA Tomonori
Department of Materials Engineering, School of Engineering, The University of Tokyo
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NAGASHIO Kosuke
Department of Materials Engineering, School of Engineering, The University of Tokyo
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SAKATA Shuichi
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Sakata Shuichi
Institute Of Industrial Science And Institute For Nano Quantum Information Electronics University Of
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Sakata Shuichi
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Nagashio Kosuke
Department Of Materials Engineering The University Of Tokyo
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Toriumi Akira
Department Of Materials Engineering The University Of Tokyo
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Kita Koji
Department Of Materials Engineering The University Of Tokyo
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Toriumi Akira
Mirai-asrc Aist
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Nishimura Tomonori
Department Of Chemistry Faculty Of Science Okayama University
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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