Internal Photoemission over HfO2 and Hf(1-x)SixO2 High-$k$ Insulating Barriers: Band Offset and Interfacial Dipole Characterization

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概要

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• The band offsets at HfO2 and Hf(1-x)SixO2 high-$k$ oxide interfaces with an aluminum metal gate and a silicon substrate have been characterized in detail by using internal photoemission spectroscopy. The quantitative comparison of the extracted energies on both sides of band offsets in the hafnium oxide, those in pure silicon oxide, suggests the presence of an interfacial dipole located at the HfO2/SiO2 interface, which becomes less significant by adding silicon inside the HfO2 film. Through the combination of internal photoemission and spectroscopic ellipsometry experiments, the band diagrams of Hf(1-x)SixO2 films were determined for different silicon concentrations. This study shows that Si 3s and Hf 5d states give independent contributions to the conduction band.

• 2008-04-25

著者

• Kita Koji

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Department Of Applied Physics University Of Tokyo

• TOMIDA Kazuyuki

  Department of Materials Engineering, School of Engineering, The University of Tokyo

• Widiez Julie

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Nishimura Tomonori

  Department Of Chemistry Faculty Of Science Okayama University

• Tomida Kazuyuki

  Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Toriumi Akira

  Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Widiez Julie

  Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Kita Koji

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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