Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation
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概要
- 論文の詳細を見る
The mechanism of the photoinduced threshold voltage shift ($\Delta V_{\text{T}}$) has been studied. We present clear evidence for electron trapping in the pentacene/SiO2 interface region, which plays a significant role in device instability. A model of $\Delta V_{\text{T}}$ and hysteresis due to the electron trapping in the pentacene/SiO2 interface region is proposed on the basis of the experimental results of bias stressing under light. The deeper states in the pentacene forbidden gap are involved in the electron trapping by increasing the reverse bias under the irradiated condition. This results in the further positive shift of $V_{\text{T}}$. In addition, it has been found that the trapped electron lifetime is well described by two time constants, which are thought to be associated with different trapping energy levels in the forbidden gap states of pentacene.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
-
Park Chang
Department Of Anatomic Pathology Chonnam National University Medical School
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Yokoyama Takamichi
Department Of Chemistry Nagaoka University Of Technology
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Nishimura Tomonori
Department Of Chemistry Faculty Of Science Okayama University
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Yokoyama Takamichi
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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