Higher-k Scalability and Leakage Current Reduction of SiO2-Doped HfO2 in Direct Tunneling Regime
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概要
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The dielectric constant scalability and leakage current reduction of ultrathin SiO2-doped HfO2 (SDH) films are demonstrated. A good linearity of capacitance--physical thickness relationship in metal--insulator--metal capacitors indicates that the high dielectric constant ({\sim}27) of the SDH film is maintained down to 2 nm in the physical thickness. Hence, the capacitance equivalent thickness (CET) is effectively reduced with the higher-k SDH film and a significant leakage current reduction at a given CET is observed in SDH films. In this thickness region, the leakage current density is determined by the physical thickness and is independent of measurement temperature. Those facts indicate the direct tunneling mechanism should dominate the leakage current. In addition, the tunneling effective mass is evaluated to be about 0.2 m_{0} (m_{0}: electron rest mass) by fitting the physical thickness dependence of leakage current to the theoretical calculation.
- 2011-11-25
著者
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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TOMIDA Kazuyuki
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Tomida Kazuyuki
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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