Study of La-Induced Flat Band Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors
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概要
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The flat band voltage in metal/HfLaOx/SiO2/Si capacitors has been investigated as a function of La concentration in HfLaOx. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaOx/SiO2 interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaOx/SiO2 interface rather than the Fermi-level pinning at the metal/HfLaOx interface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-11-15
著者
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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Yamamoto Yoshiki
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Kyuno Kentaro
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yamamoto Yoshiki
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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