Origin of Structural Phase Transformation of SiO_2-doped HfO_2

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• KITA Koji

  Department of Materials Science, Graduate School of Engineering, The University of Tokyo

• TORIUMI Akira

  Department of Materials Science, Graduate School of Engineering, The University of Tokyo

• Kita Koji

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi A

  Univ. Tokyo Tokyo Jpn

• Toriumi Akira

  The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar

• Toriumi Akira

  Advanced Lsi Technology Toshiba Corporation

• Toriumi Akira

  Department Of Applied Physics University Of Tokyo

• TOMIDA Kazuyuki

  Research Fellow of the Japan Society for the Promotion of Science

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Toriumi Akira

  Department Of Materials Engineering The University Of Tokyo

• Kita Koji

  Department Of Materials Engineering The University Of Tokyo

• Toriumi Akira

  Mirai-asrc Aist

• Kita Koji

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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• Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
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