Advantages of Ge (111) Surface for High Quality HfO_2/Ge Interface
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Toyama Masahiro
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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KITA Koji
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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KYUNO Kentaro
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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TORIUMI Akira
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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Kyuno Kentaro
Institute Of Industrial Science University Of Tokyo
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Toyama Masahiro
Department Of Cardiology Institute Of Clinical Medicine University Of Tsukuba
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弓野 健太郎
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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弓野 健太郎
東大教養
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Kyuno Kentaro
Department Of Materials Science Shibaura Institute Of Technology
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Toriumi Akira
Mirai-asrc Aist
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Kyuno Kentaro
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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