New Method for Characterizing Dielectric Properties of High-k Films with Time-Dependent Open-Circuit Potential Measurement
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-06-15
著者
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KITA Koji
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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KYUNO Kentaro
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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TORIUMI Akira
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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Kyuno Kentaro
Institute Of Industrial Science University Of Tokyo
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SASAGAWA Masashi
Department of Materials Science, School of Engineering, The University of Tokyo
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Sasagawa Masashi
Department Of Materials Science School Of Engineering The University Of Tokyo
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弓野 健太郎
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Kyuno Kentaro
Department Of Materials Science Shibaura Institute Of Technology
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Kyuno Kentaro
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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