Novel Crystallization Process for Germanium Thin Films: Surfactant-Crystallization Method
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概要
- 論文の詳細を見る
A new process called the surfactant-crystallization method is used to fabricate crystalline Ge thin films. By depositing Ge on a heated substrate, on which a Au film is predeposited, the formation of crystal Ge is confirmed at a substrate temperature as low as 200 °C and at a heating duration of only 60 s.
- 2013-01-25
著者
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Miura Hiroyuki
Department Of Civil Engineering
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Kamiko Masao
Institute For Materials Research Tohoku University
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Kyuno Kentaro
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Miura Hiroyuki
Department of Materials Science, Shibaura Institute of Technology, Koto, Tokyo 135-8548, Japan
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Kyuno Kentaro
Department of Materials Science, Shibaura Institute of Technology, Koto, Tokyo 135-8548, Japan
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