Chemical Composition and Thermal Stability of Atomic Force Microscope-Assisted Anodic Oxides as Nanomasks for Molecular Beam Epitaxy

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概要

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• We have investigated the thermal stability of GaAs-oxides grown by atomic force microscope (AFM)-assisted anodic oxidation to identify the conditions suitable for fabricating oxide nanomasks for molecular beam epitaxy (MBE). The oxides grown at bias voltages, V_{\text{ox}}, less than 30 V were desorbed after standard thermal cleaning in MBE, while the oxide patterns fabricated at V_{\text{ox}} \geq 40 V survived on the GaAs surfaces. From X-ray photoemission spectroscopy, we have found that the better thermal stability of AFM-oxides grown at V_{\text{ox}} > 40 V can be attributed to the formation of Ga2O3 and that Ga2O3 can be used as nanomasks for site-controlled MBE growth.

• 2011-12-25

著者

• Shibata Kenji

  Institute For Materials Research Tohoku University

• Hirakawa Kazuhiko

  Institute Of Industrial Science And Institute For Nano Quantum Information Electronics University Of

• Yamamoto Ryoichi

  Institute For Chemical Research Kyoto University:fuji Photo Film Co. Ltd.

• Kamiko Masao

  Institute For Materials Research Tohoku University

• Kamiko Masao

  Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Cha Kyu

  Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Hirakawa Kazuhiko

  Institute of Industrial Science and INQIE, University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Hirakawa Kazuhiko

  Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Shibata Kenji

  Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan

• CHA Kyu

  Institute of Industrial Science, University of Tokyo

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