Extremely Large Photoconductive Gains in Modulation-Doped Quantum Dot Photodetectors
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概要
- 論文の詳細を見る
We have investigated the photocurrent spectra and lifetime of photoexcited carriers in modulation-doped quantum dot infrared photodetectors (MD-QDIPs). The lifetime was as long as 3 ms and the photoconductive gain was about 10^5 at 77K. The extremely large photoconductive gain enables high sensitivity operation and demonstrates superiority of MD-QDIPs. Furthermore, it is found that the lifetime as well as responsivity increases exponentially with increasing distance between heterointerface and QD layer.
- 社団法人電子情報通信学会の論文
- 2001-06-28
著者
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Lee Seung-Woong
Institute of Industrial Science, University of Tokyo
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Lee Seung-woong
Institute Of Industrial Science University Of Tokyo
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Hirakawa Kazuhiko
Institute Of Industrial Science And Institute For Nano Quantum Information Electronics University Of
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Hirakawa Kazuhiko
Institute of Industrial Science and INQIE, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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