Time Constant for High-Field Domain Formation in Multiple Quantum Well Sequential Resonant Tunneling Diodes
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
-
Shimada Yozo
Institute Of Industrial Science University Of Tokyo
-
Hirakawa Kazuhiko
Institute Of Industrial Science And Institute For Nano Quantum Information Electronics University Of
-
Hirakawa Kazuhiko
Institute Of Industrial Science University Of Tokyo
-
Hirakawa Kazuhiko
Institute of Industrial Science and INQIE, University of Tokyo, Meguro, Tokyo 153-8505, Japan
関連論文
- Fractional Quantum Hall Effect at ν=1/7
- A Boltzmann Approach to Transient Bloch Emission from Semiconductor Superlattices
- Extremely Large Photoconductive Gains in Modulation-Doped Quantum Dot Photodetectors
- Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)
- Tarahertz Emission from Quantum Beats in Coupled Quantum Wells
- Terahertz Emission from Quantum Beats in Coupled Quantum Wells
- Direct Determination of Bare Confinement Potentials in AlGaAs/GaAs Split-Gate Quantum Wires by Far-Infrared Spectroscopy
- Splitting of Photoluminescence Spectra and Negative Differential Resistance Caused by the Electric Field Induced Resonant Coupling of Quantized Levels in GaAs-AlGaAs Multi-Quantum Well Structures
- Structural Stability of Ni Quantum Point Contacts under Electrical Stresses
- Fabrication of Single-Electron Transistor Composed of a Self-Assembled Quantum Dot and Nanogap Electrode by Atomic Force Microscope Local Oxidation
- Optical and Transport Properties of Single Quantum Well Infrared Photodetectors
- Coherent Transport through Electron Wave Directional Coupling Structures
- Critical Voltage for Atom Migration in Ballistic Copper Nanojunctions and Its Implications to Interconnect Technology for Very Large Scale Integrated Circuits
- Transport and Optical Properties of Single Quantum Well Infrared Photodetectors
- Second Activation Energy in the Fractional Quantum Hall Effect
- Time Constant for High-Field Domain Formation in Multiple Quantum Well Sequential Resonant Tunneling Diodes
- High-field Domain Formation Conditions in Semiconductor Multiple Quantum Well Sequential Resonant Tunneling Structures
- Energy relaxation of two-dimensional electrons in Si-MOSFETs : determination of deformational potential constant of conduction band of Si
- Time Constant for High-Field Domain Formation in Multiple Quantum Well Sequential Resonant Tunneling Diodes
- Extremely Large Photoconductive Gains in Modulation-Doped Quantum Dot Photodetectors
- Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy
- Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy
- Chemical Composition and Thermal Stability of Atomic Force Microscope-Assisted Anodic Oxides as Nanomasks for Molecular Beam Epitaxy
- Terahertz Emission due to Miniband Transport in GaAs/AlGaAs Superlattices
- Importance of Moisture Control in Formation of Nanogap Electrodes by Electrical Break Junction Method