Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing
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概要
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The oxidation mechanism at the HfO2/Si interface is discussed by investigating oxidation kinetics on the basis of experimental results that were obtained using the technique of grazing incidence X-ray reflectivity (GIXR) in combination with spectroscopic ellipsometry (SE) measurements. In a relatively thick HfO2 region, the interface layer growth shows a logarithmic dependence on annealing time, while the activation energy of oxidation is very small compared with that of conventional oxidation. These results clearly indicate that the oxidation mechanism at the HfO2/Si interface is different from that at the Si surface. Moreover, it is also reported that the oxidation at the HfO2/Si interface has no surface orientation dependence, no HfO2 thickness dependence and a slight O2 pressure dependence. All of the results obtained in this work suggest that atomic oxygen is involved in the oxidation at the HfO2/Si interface and the diffusion of oxygen atoms in the interface layer limits oxidation rate in a relatively thick HfO2 region. On the other hand, in an ultra-thin HfO2 region, HfO2 thickness dependence and Si surface orientation dependence are observed. These results suggest that both atomic oxygen and molecular oxygen are involved in the interface oxidation in an ultra-thin HfO2 region. On the basis of the results, we propose a kinetic model for the oxidation associated with both atomic oxygen and molecular oxygen at the HfO2/Si interface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-08-15
著者
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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Shimizu Haruka
Department Of Materials Science School Of Engineering The University Of Tokyo
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Kita Koji
Department of Materials Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Toriumi Akira
Department of Materials Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kyuno Kentaro
Department of Materials Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kyuno Kentaro
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Shimizu Haruka
Department of Materials Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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