Junctionless Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate
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概要
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A junctionless field-effect transistor (FET) has been proposed using a Si nanowire FET. It avoids the junction formation process and shows less sensitivity to the channel interface. We discuss the junctionless FET on a Ge-on-insulator substrate, which combines the higher mobility in Ge than in Si with all the advantages of a junctionless FET. The device shows similar current--voltage ($I$--$V$) characteristics to conventional FETs, and the on/off current ($I_{\text{on}}/I_{\text{off}}$) ratio is larger than $10^{4}$. The field-effect mobility seems to be rather flat with regard to the carrier density.
- 2011-03-25
著者
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Lee Choong
Department Of Anatomy And Cell Biology College Of Veterinary Medicine And Bk21 Program For Veterinar
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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Nagashio Kosuke
Department Of Materials Engineering The University Of Tokyo
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Nishimura Tomonori
Department Of Chemistry Faculty Of Science Okayama University
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Zhao Dan
Department Of Dermatology The 2nd Affiliated Hospital Of Dalian Medical University
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Kita Koji
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Nagashio Kosuke
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Nishimura Tomonori
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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