Step and Terrace Formation on Ge(111) Surface in H? Annealing
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関連論文
- Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- Mobility Variations in Mono- and Multi-Layer Graphene Films
- Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
- Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
- Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy
- Interfacial Dipole at High-$k$ Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics
- Isotope Tracing Study of GeO Desorption Mechanism from GeO2/Ge Stack Using 73Ge and 18O
- Junctionless Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate
- High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
- Density-of-states limited contact resistance in graphene field-effect transistors (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge MetalOxideSemiconductor Field-Effect Transistors
- Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
- Step and Terrace Formation on Ge(111) Surface in H? Annealing
- Counter Dipole Layer Formation in Multilayer High-k Gate Stacks
- Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks
- Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction
- Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
- Oxidation Rate Reduction of Ge with O_2 Pressure Increase
- Step and Terrace Formation on Ge(111) Surface in H_2 Annealing