Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors

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概要

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• The operation of germanium (Ge) dual-gated junctionless p-channel field-effect transistors (DG JL pFETs) is demonstrated. The top-gated hole mobility is approximately 120 cm2\cdotV-1\cdots-1, which is close to the bulk mobility of p-type Ge with a doping concentration of 10^{19} cm-3. The mobility has a weak hole density dependence and increases by applying a negative bottom gate voltage. In addition, simple analytical expressions for both the current--voltage characteristics and the threshold voltage in the linear region of the DG JL pFET are described. The result shows that normally-off Ge DG JL pFETs are achievable. Furthermore, the threshold voltage variation due to the random dopant number fluctuations in the channel is also discussed, which indicates that it can be reduced by decreasing the Ge and oxide thicknesses.

• 2012-04-25

著者

• Lee Choong

  Department Of Anatomy And Cell Biology College Of Veterinary Medicine And Bk21 Program For Veterinar

• Toriumi Akira

  Department Of Applied Physics University Of Tokyo

• Nagashio Kosuke

  Department Of Materials Engineering The University Of Tokyo

• Nishimura Tomonori

  Department Of Chemistry Faculty Of Science Okayama University

• Zhao Dan

  Department Of Dermatology The 2nd Affiliated Hospital Of Dalian Medical University

• Zhao Dan

  Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Cheng Guo

  College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China

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