Nishimura Tomonori | Department Of Chemistry Faculty Of Science Okayama University
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概要
関連著者
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Nishimura Tomonori
Department Of Chemistry Faculty Of Science Okayama University
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Nagashio Kosuke
Department Of Materials Engineering The University Of Tokyo
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NISHIMURA Tomonori
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Toriumi Akira
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Toriumi Akira
Department Of Materials Engineering The University Of Tokyo
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Toriumi Akira
Mirai-asrc Aist
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KITA Koji
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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TORIUMI Akira
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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Kita Koji
Department Of Materials Engineering The University Of Tokyo
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Lee Choong
Department Of Anatomy And Cell Biology College Of Veterinary Medicine And Bk21 Program For Veterinar
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Takahashi Toshitake
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Wang Sheng
Department Of Applied Chemistry & Biotechnology Fukui University
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Park Chang
Department Of Anatomic Pathology Chonnam National University Medical School
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TABATA Toshiyuki
Department of Materials Engineering, School of Engineering, The University of Tokyo
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NAGASHIO Kosuke
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Yokoyama Takamichi
Department Of Chemistry Nagaoka University Of Technology
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Park Chang
Department of Chemical and Biochemical Engineering, Dongguk University
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YOKOYAMA Takamichi
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Park Chang
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Lee Choong
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Zhu Li
Department Of Agriscience And Bioscience Tokyo University Of Agriculture And Technology
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Widiez Julie
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Wang Sheng
Department Of Materials Engineering The University Of Tokyo
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Suzuki Sho
Department Of Chemical Engineering & Materials Science Doshisha University
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Yokoyama Takamichi
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Zhao Dan
Department Of Dermatology The 2nd Affiliated Hospital Of Dalian Medical University
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Kita Koji
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Toriumi Akira
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Nomura Hideyuki
Department of Electronic Engineering, The University of Electro-Communications
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Nishimura Tomonori
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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WANG Sheng
Department of Occupational Health, School of Public Health, Beijing University
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LEE Choong
Department of Anatomy and Cell Biology, College of Veterinary Medicine and BK21 Program for Veterina
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NOMURA Hideyuki
Department of Internal Medicine, Shin-Kokura Hospital
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Zhao Yi
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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SAKATA Shuichi
Department of Materials Engineering, School of Engineering, The University of Tokyo
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WIDIEZ Julie
Department of Materials Engineering, School of Engineering, The University of Tokyo
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TAKAHASHI Toshitake
Department of Materials Engineering, School of Engineering, The University of Tokyo
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SUZUKI Sho
Department of Materials Engineering, School of Engineering, The University of Tokyo
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TOMIDA Kazuyuki
Department of Materials Engineering, School of Engineering, The University of Tokyo
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ZHU Li
Department of Immunology, Institute of Basic Medical Sciences, Chinese Academy of Medical Sciences a
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Nomura Hideyuki
Department Of Electronics The University Of Electro-communications
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Sueishi Yoshimi
Department Of Chemistry Faculty Of Science Okayama University
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Sakata Shuichi
Institute Of Industrial Science And Institute For Nano Quantum Information Electronics University Of
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Sakata Shuichi
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Zhu Li
Department Of Materials Engineering The University Of Tokyo
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Suzuki Sho
Department Of Chemical Engineering Tokyo Institute Of Technology
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Nomura Hideyuki
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Zhao Yi
Department Of Chemistry Tongji University
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Suzuki Sho
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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MIYAKAWA Tamami
Department of Chemistry, Faculty of Science, Okayama University
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Miyakawa Tamami
Department Of Chemistry Faculty Of Science Okayama University
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Zhu Li
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Zhao Dan
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Hibino Shinya
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Tomida Kazuyuki
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Wang Sheng
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Kita Koji
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Koji Kita
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Toriumi Akira
Department of Materials Engineering, The University of Tokyo
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Toriumi Akira
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Toriumi Akira
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Nagashio Kosuke
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Kosuke Nagashio
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Cheng Guo
College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China
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Nishimura Tomonori
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Nishimura Tomonori
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Tomonori Nishimura
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Takahashi Toshitake
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Suzuki Sho
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Widiez Julie
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Akira Toriumi
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yokoyama Takamichi
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yokoyama Takamichi
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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LEE Choong
Department of Materials Engineering, School of Engineering, The University of Tokyo
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NAGASHIO Kosuke
Department of Materials Engineering, The University of Tokyo
著作論文
- Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- Mobility Variations in Mono- and Multi-Layer Graphene Films
- Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
- A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
- Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
- Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
- Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
- Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
- Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
- Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
- Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy
- Interfacial Dipole at High-$k$ Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics
- Isotope Tracing Study of GeO Desorption Mechanism from GeO2/Ge Stack Using 73Ge and 18O
- Junctionless Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate
- High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
- A Method of Evaluating the Rate Constant of the Thermal Isomerization of 6-SO_3^--spiropyran by Using β-Cyclodextrin
- Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge MetalOxideSemiconductor Field-Effect Transistors
- Internal Photoemission over HfO2 and Hf(1-x)SixO2 High-$k$ Insulating Barriers: Band Offset and Interfacial Dipole Characterization
- Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
- Counter Dipole Layer Formation in Multilayer High-k Gate Stacks
- Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction
- Oxygen-Related Degradation Mechanisms for On- and Off-States of Perfluoropentacene Thin-Film Transistors
- Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
- Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation
- Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
- Oxidation Rate Reduction of Ge with O_2 Pressure Increase
- Step and Terrace Formation on Ge(111) Surface in H_2 Annealing