Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
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概要
- 論文の詳細を見る
From the studies on the thermal desorption behaviors of GeO2 film and its impact on the electrical properties of GeO2/Ge metal–insulator–semiconductor (MIS) capacitors, it was clarified that the GeO volatilization is driven by the interface reaction at GeO2/Ge, and that volatilization is the origin of the interface deterioration of the MIS capacitors. We found that a Si cap layer formed on top of the GeO2 film suppresses the GeO desorption very efficiently. Then, a marked improvement of the capacitance–voltage ($C$–$V$) characteristics was successfully demonstrated with the GeO2/Ge MIS capacitors fabricated by capped annealing process, where a Ni silicide electrode was used as the cap layer. These results provided us quite an important guide for realizing high-quality Ge/dielectric interfaces.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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Takahashi Toshitake
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Suzuki Sho
Department Of Chemical Engineering & Materials Science Doshisha University
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Nishimura Tomonori
Department Of Chemistry Faculty Of Science Okayama University
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Nomura Hideyuki
Department of Electronic Engineering, The University of Electro-Communications
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Nishimura Tomonori
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Takahashi Toshitake
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Suzuki Sho
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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