Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks
スポンサーリンク
概要
著者
関連論文
- Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
- Acetic Acid-Induced Experimental Gastric Ulcer in Dogs : Effect of Histamine on the Healing of the Ulcer
- High-electron-mobility Ge n-channel metal-oxide-semiconductor field-effect transistors with high-pressure oxidized Y2O3
- High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
- Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks
- Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge MetalOxideSemiconductor Field-Effect Transistors
- Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics