High-electron-mobility Ge n-channel metal-oxide-semiconductor field-effect transistors with high-pressure oxidized Y2O3

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文

著者

• Takahashi Toshitake

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

関連論文

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• High-electron-mobility Ge n-channel metal-oxide-semiconductor field-effect transistors with high-pressure oxidized Y2O3
• High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
• Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks
• Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge MetalOxideSemiconductor Field-Effect Transistors
• Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics

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