Interfacial Dipole at High-$k$ Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics

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概要

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• Band bending at both the SiO2 side and the high-$k$ side of the high-$k$/SiO2 interface has been investigated using X-ray photoelectron spectroscopy (XPS). This band bending is not understandable on the basis of silicate formation or the fixed charges in high-$k$/SiO2/Si stacks if we do not consider dipole formation at the high-$k$/SiO2 interface, which in turn confirms the dipole formation at the HfO2/SiO2 interface and at the Y2O3/SiO2 interface. By investigating band bending behavior, the opposite dipole directions have been evaluated between these two interfaces, and the relative difference in dipole magnitude has been demonstrated between the HfO2/SiO2 interface and the Y2O3/SiO2 interface. Although the band bending of SiO2 is underestimated and that of high-$k$ is overestimated, the estimation of relative dipole magnitude is not affected. The relative difference in dipole magnitude is estimated to be ${\sim}0.6$ eV between the HfO2/SiO2 interface and the Y2O3/SiO2 interface, which is consistent with relative flatband voltage shifts of ${\sim}0.5$ V.

• 2011-03-25

著者

• Kita Koji

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Department Of Applied Physics University Of Tokyo

• Zhu Li

  Department Of Agriscience And Bioscience Tokyo University Of Agriculture And Technology

• Nagashio Kosuke

  Department Of Materials Engineering The University Of Tokyo

• Nishimura Tomonori

  Department Of Chemistry Faculty Of Science Okayama University

• Wang Sheng

  Department Of Applied Chemistry & Biotechnology Fukui University

• Zhu Li

  Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Kita Koji

  Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Kita Koji

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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