Oxygen-Related Degradation Mechanisms for On- and Off-States of Perfluoropentacene Thin-Film Transistors
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概要
- 論文の詳細を見る
We investigated the performance degradations mechanisms in n-channel perfluoropentacene thin-film transistors (PF-pentacene TFTs) exposed to dry O2. We found that the PF-pentacene TFTs are significantly degraded when they are operated in dry O2 rather than when just exposed to dry O2. Furthermore, the performance degradation resulting from exposure to dry O2 is caused by the mobility decrease, while that with the TFT operation in dry O2 is caused by the threshold voltage ($V_{\text{th}}$) increase as well as the mobility decrease. The present results indicate that an interaction between neutral PF-pentacene and O2 molecules induces a slight mobility decrease, while that between n-doped PF-pentacene and O2 molecules predominantly brings about a significant $V_{\text{th}}$ increase.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-05-25
著者
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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Park Chang
Department Of Anatomic Pathology Chonnam National University Medical School
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Yokoyama Takamichi
Department Of Chemistry Nagaoka University Of Technology
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Nishimura Tomonori
Department Of Chemistry Faculty Of Science Okayama University
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Kita Koji
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Toriumi Akira
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Nishimura Tomonori
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yokoyama Takamichi
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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