Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction

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概要

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• Ge is a promising candidate for replacing Si for future complementary metal--oxide--semiconductors (CMOSs) because of its high mobility. However, the intrinsic GeO2/Ge instability is a major obstacle to achieving a good interface. The reaction at the GeO2/Ge interface and the kinetic effects initiated by the interfacial reaction are systematically studied in this paper. The interfacial reaction is regarded as a redox reaction mediated by the oxygen vacancy (V\text{o). Owing to the incorporation of V\text{o into GeO2, several kinetic effects are brought about. In this paper, we discuss these V\text{o-induced kinetic effects such as GeO desorption, GeO2 crystallization with an \alpha-quartz-like phase, and local void formation on GeO2. A unified model is proposed by taking V\text{o generation at the GeO2/Ge interface into consideration.

• 2011-10-25

著者

• Kita Koji

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Toriumi Akira

  Department Of Applied Physics University Of Tokyo

• Nagashio Kosuke

  Department Of Materials Engineering The University Of Tokyo

• Nishimura Tomonori

  Department Of Chemistry Faculty Of Science Okayama University

• Wang Sheng

  Department Of Applied Chemistry & Biotechnology Fukui University

• Wang Sheng

  Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Toriumi Akira

  Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Nishimura Tomonori

  Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Kita Koji

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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