Toriumi Akira | Mirai-asrc Aist
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概要
関連著者
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Toriumi Akira
Mirai-asrc Aist
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Toriumi Akira
Department Of Applied Physics University Of Tokyo
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TORIUMI Akira
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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KITA Koji
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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Toriumi Akira
Department Of Materials Engineering The University Of Tokyo
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Kita Koji
Department Of Materials Engineering The University Of Tokyo
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Toriumi Akira
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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KYUNO Kentaro
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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Kyuno Kentaro
Institute Of Industrial Science University Of Tokyo
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弓野 健太郎
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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弓野 健太郎
東大教養
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Kyuno Kentaro
Department Of Materials Science Shibaura Institute Of Technology
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Kyuno Kentaro
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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NISHIMURA Tomonori
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Nishimura Tomonori
Department Of Chemistry Faculty Of Science Okayama University
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KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Koga J
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Nabatame Toshihide
Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva
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Nabatame T
Aist Tsukuba Jpn
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Nabatame Toshihide
Mirai-aset Advanced Industrial Science And Technology (aist)
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Toriumi Akira
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi Akira
Advanced Lsi Technology Laboratory Toshiba Corporation
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Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Ota Hiroyuki
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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OHBA Ryuji
Advanced LSI Technology Laboratory, Toshiba Corporation
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Ohba R
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida K
Advanced Lsi Technology Laboratory Toshiba Corporation
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Nagashio Kosuke
Department Of Materials Engineering The University Of Tokyo
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Uchida Ken
Corporate R&d Center Toshiba Corporation
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NAGASHIO Kosuke
Department of Materials Engineering, School of Engineering, The University of Tokyo
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UCHIDA Ken
Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation
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KADOSHIMA Masaru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Kadoshima Masaru
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Uchida Ken
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida Ken
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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岡田 健治
半導体MIRAI-ASET
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Zhao Yi
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Okada K
Yamaguchi Univ. Yamaguchi Jpn
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Takagi S
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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TOMIDA Kazuyuki
Research Fellow of the Japan Society for the Promotion of Science
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岡田 健治
松下電器産業(株)
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IKEDA Minoru
MIRAI-ASET
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TAKAGI Shin-ichi
Advanced LSI Technology Laboratory, Toshiba Corporation
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OKADA Kenji
MIRAI-ASET, AIST
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HORIKAWA Tsuyoshi
MIRAI-ASRC, AIST
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SATAKE Hideki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Satake Hideki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Hayashi T
Mirai-asrc-aist
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Horikawa Tsuyoshi
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Zhao Yi
Department Of Chemistry Tongji University
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Satake Hideki
Mirai-aset Aist
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Horikawa Tsuyoshi
Mirai-asrc Aist
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiha Corporation
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Ohba Ryuji
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Ikeda Minoru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Park Chang
Department of Chemical and Biochemical Engineering, Dongguk University
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Park Chang
Department Of Anatomic Pathology Chonnam National University Medical School
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YOKOYAMA Takamichi
Department of Materials Engineering, School of Engineering, The University of Tokyo
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TOMIDA Kazuyuki
Department of Materials Engineering, School of Engineering, The University of Tokyo
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YAMAMOTO Yoshiki
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Park Chang
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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MIZUBAYASHI Wataru
MIRAI-ASRC
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Kresse Georg
Institut Fur Materialphysik Univeisitat Wien
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Takahashi Toshitake
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Yamamoto Yoshiki
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Yokoyama Takamichi
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Yokoyama Takamichi
Department Of Chemistry Nagaoka University Of Technology
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Mizubayashi Wataru
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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NOMURA Hideyuki
Department of Internal Medicine, Shin-Kokura Hospital
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Toyama Masahiro
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Lee Choong
Department Of Anatomy And Cell Biology College Of Veterinary Medicine And Bk21 Program For Veterinar
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TABATA Toshiyuki
Department of Materials Engineering, School of Engineering, The University of Tokyo
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AKIYAMA Koji
MIRAI-ASET
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SUGIYAMA Naoharu
Advanced LSI Technology Laboratory, Toshiba Corporation
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Sugiyama N
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama Naoharu
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Nomura Hideyuki
Department Of Electronics The University Of Electro-communications
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Fujiwara Hideaki
Mirai-aset Aist
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MISE Nobuyuki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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IWAMOTO Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Lee Choong
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center (starc)
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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OGAWA Arito
MIRAI-ASET
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Matsuzawa K
Toshiba Corp. Yokohama‐shi Jpn
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Toyama Masahiro
Department Of Cardiology Institute Of Clinical Medicine University Of Tsukuba
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Wang Sheng
Department Of Materials Engineering The University Of Tokyo
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KOGA Junji
The authors are with Advanced LSI Technology Laboratory, Toshiba Corporation
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Nomura Hideyuki
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Mise Nobuyuki
Mirai-aset Aist
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Sugiyama Naoharu
Advanced Lsi Technology Laboratory Toshiba Corporation
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Iwamoto Kunihiko
Mirai-aset
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Wang Sheng
Department Of Applied Chemistry & Biotechnology Fukui University
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Nomura Hideyuki
Department of Electronic Engineering, The University of Electro-Communications
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Akiyama Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Ogawa Arito
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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WANG Sheng
Department of Occupational Health, School of Public Health, Beijing University
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LEE Choong
Department of Anatomy and Cell Biology, College of Veterinary Medicine and BK21 Program for Veterina
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Komoda Taiki
Department Of Materials Science Graduate School Of Engineering The University Of Tokyo
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ENDO Yasuhiro
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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Yasuda Naoki
Mirai-aset Aist
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Tominaga Koji
Mirai-aset Aist
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Endo Yasuhiro
Department Of Materials Science Graduate School Of Engineering The University Of Tokyo
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Ohno Morifumi
National Institute of Advanced Industrial Science and Technology
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Sasaki Takaoki
Semiconductor Leading Edge Technologies Inc.
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Sasaki Takaoki
Semiconductor Leading Edge Technologies (selete) Aist
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SAKATA Shuichi
Department of Materials Engineering, School of Engineering, The University of Tokyo
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WIDIEZ Julie
Department of Materials Engineering, School of Engineering, The University of Tokyo
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TAKAHASHI Toshitake
Department of Materials Engineering, School of Engineering, The University of Tokyo
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SUZUKI Sho
Department of Materials Engineering, School of Engineering, The University of Tokyo
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ZHU Li
Department of Immunology, Institute of Basic Medical Sciences, Chinese Academy of Medical Sciences a
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WANG Wenwu
MIRAI-ASRC
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SHIMIZU Haruka
Department of Materials Science, School of Engineering, The University of Tokyo
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Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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MATSUZAWA Kazuya
Advanced LSI Technology Laboratory, Toshiba Corporation
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VANDERSTRAETEN Celine
Advanced LSI Technology Laboratory, Toshiba Corporation
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OOTSUKA Fumio
Semiconductor Leading Edge Technologies Inc.
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TAMURA Yasuyuki
Semiconductor Leading Edge Technologies (Selete), AIST
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AOYAMA Tomonori
Semiconductor Leading Edge Technologies (Selete), AIST
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HISAMATSU Hirokazu
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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MIGITA Shinji
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scie
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YAMAMOTO Katsuhiko
MIRAI-ASET, AIST
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Hisamatsu Hirokazu
Mirai-aset Aist
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大野 守史
沖セミコンダクター(株)
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Zhu Li
Department Of Agriscience And Bioscience Tokyo University Of Agriculture And Technology
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Widiez Julie
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Migita Shinji
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Ohno Morifumi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Ohno Morifumi
Mirai-aset Aist
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TAKABA Hiroyuki
MIRAI-ASET, AIST
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Sakata Shuichi
Institute Of Industrial Science And Institute For Nano Quantum Information Electronics University Of
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Sakata Shuichi
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Takaba Hiroyuki
Mirai-aset Aist
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Zhu Li
Department Of Materials Engineering The University Of Tokyo
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UCHIDA Ken
The authors are with Advanced LSI Technology Laboratory, Toshiba Corporation
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OHBA Ryuji
The authors are with Advanced LSI Technology Laboratory, Toshiba Corporation
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Suzuki Sho
Department Of Chemical Engineering Tokyo Institute Of Technology
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Ootsuka Fumio
Semiconductor Leading Edge Technologies (selete) Aist
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大野 守史
静岡大学電子工学研究所
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Shimizu Haruka
Department Of Materials Science School Of Engineering The University Of Tokyo
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Tamura Yasuyuki
Semiconductor Leading Edge Technologies (selete) Aist
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Vanderstraeten Celine
Advanced Lsi Technology Laboratory Toshiba Corporation
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大野 守史
(株) ソルテック
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Suzuki Sho
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Suzuki Sho
Department Of Chemical Engineering & Materials Science Doshisha University
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Aoyama Tomonori
Semiconductor Company Toshiba Corporation
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Aoyama Tomonori
Semiconductor Leading Edge Technologies (selete) Aist
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Endo Yasuhiro
Department Of Internal Medicine Heart Institute Japan Tokyo Women's Medical College
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Yamamoto Katsuhiko
Mirai-aset Aist
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Migita Shinji
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Tominaga Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Anomalous positive V_ shift in HfAlO_x MOS gate stacks
- Study of La Concentration Dependent V_ Shift in Metal/HfLaOx/Si Capacitors
- Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
- Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- Mobility Variations in Mono- and Multi-Layer Graphene Films
- Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
- A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
- Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
- Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
- Origin of Structural Phase Transformation of SiO_2-doped HfO_2
- Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
- Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
- Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
- Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
- Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
- Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
- Excellent Leakage Current of Crystallized Silicon-Doped HfO_2 Films Down to Sub-nm EOT
- Thermally Robust Y_2O_3/Ge MOS Capacitors
- Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon
- Design Methodology for La_2O_3-Based Ternally Higher-κ Dielectrics
- A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS
- Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing
- Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification
- Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount of Si
- Stable Observation of the Evolution of Leakage Spots in HfO_2/SiO_2 stacked structures by UHV-C-AFM
- Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by the Time-Dependent OCP Measurement
- Advantages of Ge (111) Surface for High Quality HfO_2/Ge Interface
- Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
- New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
- Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
- Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
- Theoretical analysis of the Fermi level pinning in HfO_2/Si system induced by the interface defect states
- Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
- Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2
- Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
- Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy
- Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
- Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
- Permittivity Enhancement of Hf_Si_xO_2 Film with High Temperature Annealing
- Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
- Silicon Planar Esaki Diode Operating at Room Temperature
- SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
- Challenge to new silicon devices
- A New Design Scheme for Logic Circuits with Single Electron Transistors
- High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
- Higher-k Scalability and Leakage Current Reduction of SiO-Doped HfO in Direct Tunneling Regime