Ikeda Minoru | MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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概要
- Ikeda Minoruの詳細を見る
- 同名の論文著者
- MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japanの論文著者
関連著者
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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IKEDA Minoru
MIRAI-ASET
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Ikeda Minoru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Nabatame Toshihide
Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva
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Nabatame T
Aist Tsukuba Jpn
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Nabatame Toshihide
Mirai-aset Advanced Industrial Science And Technology (aist)
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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Toriumi Akira
Department Of Materials Engineering The University Of Tokyo
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Toriumi Akira
Mirai-asrc Aist
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Kresse Georg
Institut Fur Materialphysik Univeisitat Wien
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Kadoshima Masaru
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Satake Hideki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Toriumi Akira
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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AKIYAMA Koji
MIRAI-ASET
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MISE Nobuyuki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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IWAMOTO Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Toriumi Akira
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Akiyama Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
Mirai-aset Aist
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Tominaga Koji
Mirai-aset Aist
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Yasuda Tetsuji
Mirai Project Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industria
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WANG Wenwu
MIRAI-ASRC
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MIZUBAYASHI Wataru
MIRAI-ASRC
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HORIKAWA Tsuyoshi
MIRAI-ASRC, AIST
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KADOSHIMA Masaru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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MIGITA Shinji
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scie
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SATAKE Hideki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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OGAWA Arito
MIRAI-ASET
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TAKAHASHI Masashi
MIRAI-ASET
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NISHIZAWA Masayasu
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industr
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Hayashi T
Mirai-asrc-aist
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Horikawa Tsuyoshi
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Satake Hideki
Mirai-aset Aist
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Nishizawa Masayasu
Mirai Project Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industria
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Horikawa Tsuyoshi
Mirai-asrc Aist
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Mise Nobuyuki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Satake Hideki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Nabatame Toshihide
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Kadoshima Masaru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Migita Shinji
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Migita Shinji
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Mizubayashi Wataru
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Tominaga Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Iwamoto Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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Ogawa Arito
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Anomalous positive V_ shift in HfAlO_x MOS gate stacks
- Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al_2O_3 Films using ^O Isotope
- The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
- Theoretical analysis of the Fermi level pinning in HfO_2/Si system induced by the interface defect states
- Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2
- Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics
- Low-Threshold-Voltage HfOxN p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode