Migita Shinji | MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan

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著作論文

Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics
Study on Oxynitride Buffer Layers in HfO2 Metal–Insulator–Semiconductor Structures for Improving Metal–Insulator–Semiconductor Field-Effect Transistor Performance
Fabrication of Direct-Contact Higher-k HfO2 Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing
Extremely Scaled ({\sim}0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing

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