Extremely Scaled ({\sim}0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing
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概要
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We fabricate ultrathin HfO2 gate stacks of very high permittivity by atomic layer deposition (ALD) and oxygen-controlled cap post-deposition annealing. The HfO2 layer is directly deposited on a wettability-controlled Si surface by ALD. To enhance permittivity, a cubic crystallographic phase is generated in ALD-HfO2 by short-time annealing with a Ti capping layer. The Ti layer absorbs residual oxygen in the HfO2 layer, which suppresses the growth of the interfacial SiO2 layer. The dielectric constant of ALD-HfO2 is increased to {\sim}40, and a gate stack of extremely scaled equivalent oxide thickness ({\sim}0.2 nm) is obtained.
- 2012-02-25
著者
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Morita Yukinori
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Migita Shinji
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Mizubayashi Wataru
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Morita Yukinori
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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- Fabrication of Direct-Contact Higher-k HfO2 Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing
- Extremely Scaled ({\sim}0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing
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