Fabrication of Direct-Contact Higher-k HfO2 Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing
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概要
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We demonstrate a novel technique to fabricate direct-contact HfO2 gate stacks with a very high-k value by using oxygen-controlled cap post-deposition annealing (cap-PDA). The permittivity of HfO2 was enhanced by generating a cubic crystallographic phase by abrupt thermal annealing with the capping layer deposited on HfO2. The increase in the thickness of the SiO2 interlayer during cap-PDA was effectively suppressed by controlling the oxygen chemistry with an oxygen-controlling capping layer. A very thin direct-contact HfO2 gate stack of 0.39 nm equivalent oxide thickness was realized with a HfO2 dielectric constant of {\sim}46.5 and suppression of the interfacial layer.
- 2011-10-25
著者
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Migita Shinji
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Migita Shinji
MIRAI Project---Nanodevice Innovation Research Center (MIRAI-NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Mizubayashi Wataru
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Morita Yukinori
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Morita Yukinori
MIRAI Project---Nanodevice Innovation Research Center (MIRAI-NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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