Fabrication of HfO_xN_y dielectrics on Ge from HfN_x deposition
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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MAEDA Tatsuro
MIRAI(AIST)
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Morita Yukinori
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Maeda Tatsuro
Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo
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TAKAGI Shinichi
The University of Tokyo
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Morita Yukinori
Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo
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TAKAGI Shinichi
MIRAI, Advanced Semiconductor Research Center - National Institute of Advanced Industrial Science an
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Morita Yukinori
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
関連論文
- High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique
- Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance
- Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
- High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
- Effect of Ge Metal–Insulator–Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge
- High Electron Mobility Ge n-Channel Metal--Insulator--Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique
- Fabrication of HfO_xN_y dielectrics on Ge from HfN_x deposition
- Device Design of High-Speed Source-Heterojunction-MOS-Transistors (SHOT) under 10-nm Regime
- Study on Oxynitride Buffer Layers in HfO2 Metal–Insulator–Semiconductor Structures for Improving Metal–Insulator–Semiconductor Field-Effect Transistor Performance
- Controlling Anion Composition at Metal--Insulator--Semiconductor Interfaces on III--V Channels by Plasma Processing
- Fabrication of Direct-Contact Higher-k HfO2 Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing
- Extremely Scaled ({\sim}0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing