Morita Yukinori | Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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概要
- 同名の論文著者
- Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial の論文著者
関連著者
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Morita Yukinori
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Morita Yukinori
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Migita Shinji
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
Mirai-aset Aist
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Nabatame Toshihide
Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Yasuda Tetsuji
Mirai Project Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industria
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MIGITA Shinji
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scie
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Kadoshima Masaru
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Mizubayashi Wataru
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Nabatame T
Aist Tsukuba Jpn
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Nabatame Toshihide
Mirai-aset Advanced Industrial Science And Technology (aist)
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Tominaga Koji
Mirai-aset Aist
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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MAEDA Tatsuro
MIRAI(AIST)
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TAOKA Noriyuki
MIRAI-AIST
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KADOSHIMA Masaru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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MIYATA Noriyuki
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and
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Hirano Akito
Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva
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Migita Shinji
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Maeda Tatsuro
Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo
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TAKAGI Shinichi
The University of Tokyo
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Morita Yukinori
Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo
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Toriumi Akira
Department Of Materials Engineering The University Of Tokyo
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Miyata Noriyuki
Mirai Project Advanced Semiconductor Research Center (asrc)
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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TAKAGI Shinichi
MIRAI, Advanced Semiconductor Research Center - National Institute of Advanced Industrial Science an
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Shinji Migita
MIRAI-NIRC, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Migita Shinji
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Wataru Mizubayashi
MIRAI-NIRC, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Hiroyuki Ota
MIRAI-NIRC, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shinichi Takagi
MIRAI-NIRC, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Noriyuki Taoka
MIRAI-NIRC, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Tominaga Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Tominaga Koji
MIRAI, Association of Super-Advanced Electronics Technologies, AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Miyata Noriyuki
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Yukinori Morita
MIRAI-NIRC, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Morita Yukinori
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies, AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Toriumi Akira
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance
- Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
- Effect of Ge Metal–Insulator–Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge
- Fabrication of HfO_xN_y dielectrics on Ge from HfN_x deposition
- Study on Oxynitride Buffer Layers in HfO2 Metal–Insulator–Semiconductor Structures for Improving Metal–Insulator–Semiconductor Field-Effect Transistor Performance
- Extremely Scaled ({\sim}0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing