Study on Oxynitride Buffer Layers in HfO2 Metal–Insulator–Semiconductor Structures for Improving Metal–Insulator–Semiconductor Field-Effect Transistor Performance
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概要
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In this study, we investigate effects of various buffer layers on the electrical properties of HfO2 metal–insulator–semiconductor (MIS) structures under fixed conditions for HfO2 deposition and postdeposition annealing. The buffer layers are prepared using several processes including oxidation, oxynitridation and nitridation. The equivalent oxide thickness (EOT), the flat-band voltage and the flat-band voltage hysteresis of the HfO2 MIS structures depend on the nitrogen density per unit area in oxynitride buffer layers. We reveal that the increase of EOT due to postdeposition annealing is suppressed by a certain amount of nitrogen density in oxynitride buffer layers. Based on the results, we propose an engineering methodology for the nitrogen composition and the physical thickness of the oxynitride buffer layers so as to obtain a high-performance MIS field-effect transistors.
- 2005-04-15
著者
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Yasuda Naoki
Mirai-aset Aist
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Yasuda Tetsuji
Mirai Project Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industria
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Morita Yukinori
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Kadoshima Masaru
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Miyata Noriyuki
Mirai Project Advanced Semiconductor Research Center (asrc)
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Migita Shinji
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Migita Shinji
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Tominaga Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Tominaga Koji
MIRAI, Association of Super-Advanced Electronics Technologies, AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Miyata Noriyuki
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Morita Yukinori
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Morita Yukinori
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies, AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Toriumi Akira
MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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