Thermal Stability of a Thin HfO2/Ultrathin SiO2/Si Structure: Interfacial Si Oxidation and Silicidation
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概要
- 論文の詳細を見る
We examine the thermal stability of a 2.6-nm-HfO2/0.3-nm-SiO2/Si structure in O2 pressure and in an ultrahigh vacuum. The temperature and O2-pressure dependence of Si oxidation at the HfO2/Si interface indicates that high-vacuum conditions are required to suppress interfacial oxidation (order of $10^{-7}$ Torr at 800°C). The void nucleation of Hf silicide (${<}1000$ cm-2) takes place at temperatures higher than 900°C, which raises the issue of failure when HfO2 film is used in metal-insulator-semiconductor devices.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-02-15
著者
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Ichikawa Masakazu
Mirai Project Advanced Semiconductor Research Center (asrc)
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Horikawa Tsuyoshi
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Miyata Noriyuki
Mirai Project Advanced Semiconductor Research Center (asrc)
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Toriumi Akira
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 4, Tsukuba, Ibaraki 305-8562, Japan
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Nabatame Toshihide
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), AIST Tsukuba West 7, Tsukuba, Ibaraki 305-8569, Japan
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Horikawa Tsuyoshi
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), AIST Tsukuba West 7, Tsukuba, Ibaraki 305-8569, Japan
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Miyata Noriyuki
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 4, Tsukuba, Ibaraki 305-8562, Japan
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