The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application

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概要

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• Hafnium nitride HfNx was prepared for the first time as gate metal electrode by metal organic chemical vapor deposition (MOCVD) method using tetrakis diethylamido hafnium (TDEAHf) precursor and NH3 gas. As a result, HfNx films with low levels of carbon and oxygen impurities and smooth interface were formed on SiO2 substrates. With respect to the electric property, the resistivity intensively depends on the film composition. Regardless of the experimental conditions, the resistance for all the as-deposited samples was very high due to the non-stoichiometry N-rich Hf nitrides (N/Hf: 1.69). However it decreased greatly after Ar+ ions bombardment because of the nitrogen depletion (N/Hf: 1.28), which resulted from the selective sputtering effect of nitrogen during Ar+ bombardment.

• Japan Society of Applied Physicsの論文
• 2004-11-01

著者

• Nabatame Toshihide

  Mirai Project Association Of Super-advanced Electronics Technology (aset)

• Wang Wenwu

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Shimogaki Yukihiro

  Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

• Nabatame Toshihide

  MIRAI-ASET, AIST, Tsukuba West 7, 16-1 Onogawa, Tsukuba, 305-8569, Japan

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

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