Nabatame Toshihide | MIRAI-ASET, AIST, Tsukuba West 7, 16-1 Onogawa, Tsukuba, 305-8569, Japan
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概要
- Nabatame Toshihideの詳細を見る
- 同名の論文著者
- MIRAI-ASET, AIST, Tsukuba West 7, 16-1 Onogawa, Tsukuba, 305-8569, Japanの論文著者
関連著者
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Wang Wenwu
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Nabatame Toshihide
MIRAI-ASET, AIST, Tsukuba West 7, 16-1 Onogawa, Tsukuba, 305-8569, Japan
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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Haneji Nobuo
Division Of Electrical And Computer Engineering Faculty Of Engineering Yokohama National University
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Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Shimogaki Yukihiro
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Shimogaki Yukihiro
Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,
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Haneji Nobuo
Division of Electrical and Computer Engineering, Yokohama National University, 79-1 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
著作論文
- The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application
- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition