Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition

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概要

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• Hafnium carbonitride (HfCN) films were prepared by metalorganic chemical vapor deposition (MOCVD) using Hf[N(C2H5)2]4 (TDEAHf) precursor. The electrical and thermal stability characteristics of the CVD-HfCN films as a metal gate electrode were studied for the first time for the MOS device application. As a result, the effective work function of HfCN ($\Phi_{\text{HfCN}}$) on SiO2 and HfO2 dielectrics were extracted from the $C$–$V$ measurements of each MOS stack with various equivalent oxide thickness (EOT) to be about 4.54 and 4.45 eV, respectively. Especially, for the HfCN/SiO2/Si stack, after rapid thermal annealing (RTA) at high temperature, the EOT shows negligible change; while the $\Phi_{\text{HfCN}}$ increased gradually to be about 5.08 eV at 900°C.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2005-07-10

著者

• Nabatame Toshihide

  Mirai Project Association Of Super-advanced Electronics Technology (aset)

• Haneji Nobuo

  Division Of Electrical And Computer Engineering Faculty Of Engineering Yokohama National University

• Wang Wenwu

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Shimogaki Yukihiro

  Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Nabatame Toshihide

  MIRAI-ASET, AIST, Tsukuba West 7, 16-1 Onogawa, Tsukuba, 305-8569, Japan

• Shimogaki Yukihiro

  Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,

• Haneji Nobuo

  Division of Electrical and Computer Engineering, Yokohama National University, 79-1 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

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