TiN Films Prepared by Flow Modulation Chemical Vapor Deposition using TiCl4 and NH3
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概要
- 論文の詳細を見る
We propose a new chemical vapor deposition (CVD) process, the flow modulation chemical vapor deposition (FMCVD) process, to obtain high quality titanium nitride (TiN) films at low deposition temperature in a single CVD chamber. FMCVD uses sequential deposition and reduction processes, such as the deposition of TiN films followed by chlorine reduction. This cycle was repeated to achieve sufficient film thickness. By decreasing the thickness in one cycle, the residual chlorine concentration and the resistivity of the films decreased. Using FMCVD process, we could achieve low resistivity (250 $\mu\Omega$cm), low residual chlorine concentration (2 at.%) with uniform step coverage at low deposition temperature (380°C).
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-15
著者
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Shimogaki Yukihiro
Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo
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Shimogaki Yukihiro
Department Of Metallurgy And Material Sciences School Of Engineering University Of Tokyo
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Komiyama Hiroshi
Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo
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Hamamura Hirotaka
Department Of Chemical System Engineering School Of Engineering University Of Tokyo
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Komiyama Hiroshi
Department Of Chemical System Engineering School Of Engineering University Of Tokyo
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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