Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
An InGaP layer grown by metal organic vapor phase epitaxy (MOVPE) often has an In-rich region within ${\sim}5$ nm from the top of the layer. This surface segregation degrades the interface abruptness of InGaP/GaAs systems, which is attractive for high-performance devices such as high electron mobility transistors (HEMTs). This segregation in lattice-matched InGaP/GaAs systems can be explained by considering a "subsurface" in which a surface adsorption layer controls the composition of grown epitaxial layers. In this study, the existence of a subsurface during MOVPE growth of InGaP was experimentally confirmed through kinetic analysis involving a flow modulation method. The kinetic parameters of a subsurface model, such as adsorption and desorption rate constants of each species, were estimated based on experimental data obtained from flow modulation, and then used to successfully explain the In surface segregation in InGaP-MOVPE.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-01-25
著者
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SHIODA Tomonari
Department of Electrical Engineering and Information Systems, School of Engineering, the University
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Nakano Takayuki
Department Of Biosciences Teikyo University
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Sugiyama Masakazu
Institute Of Engineering Innovation School Of Engineering The University Of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology (rcast) At The University Of Tokyo
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Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Shimogaki Yukihiro
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Shioda Tomonari
Department of Electronic Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Shimogaki Yukihiro
Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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