Double-Polarity Selective Area Growth of GaN Metal Organic Vapor Phase Epitaxy by Using Carbon Mask Layers
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概要
- 論文の詳細を見る
For nonlinear optical applications using gallium nitride (GaN), periodic inversion of crystallographic orientation (polarity) is required for quasi-phase matching. We developed a novel procedure for designing polarity patterns in GaN using metal organic vapor phase epitaxy (MOVPE), and we used this to fabricate periodic polarity-inverted GaN films. By using a carbon mask for the formation of the selective area, substrate nitriding and mask removal of the selective area were carried out in the GaN epitaxial growth process. In this report, double-polarity selective area growth (DP-SAG) was realized by optimizing the nitriding and mask removal conditions. The interface of the Ga-polarity/N-polarity region became sharp by controlling the V/III ratio at 4700.
- 2013-08-25
著者
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Takano Yasushi
Department Of Agricultural-environmental Biology Graduate School Of Agriculture And Life Sciences Th
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Fuke Shunro
Department Of Electrical & Electronic Engineering Shizuoka University
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FUJITA Yohei
Department of Materials Science and Engineering & Frontier Research Center, Graduate School of Engin
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Inoue Yoku
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shizuoka University
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Nakano Takayuki
Department Of Biosciences Teikyo University
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Sumiya Masatomo
Advanced Photovoltaics Center National Institute For Materials Science
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Sumiya Masatomo
Advanced Photovoltaics Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Inoue Yoku
Department of Electronics and Electronic Materials Science, Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Fuke Shunro
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Takano Yasushi
Department of Electronics and Electronic Materials Science, Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Nakano Takayuki
Department of Electronics and Electronic Materials Science, Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Fujita Yohei
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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