Epitaxial Growth of Gap by GaPO_4-C System
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-09-05
著者
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Fuke Shunro
Department Of Electrical And Electronic Engineering Shizuoka University
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Fuke Shunro
Department Of Electrical & Electronic Engineering Shizuoka University
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Fuke Shunro
Department Of Electronic Engineering Faculty Of Engineering Shizuoka University
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OHKE Shigeaki
Department of Electronic Engineering, Faculty of Engineering, Shizuoka University
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KUWAHARA Kazuhiro
Department of Electronic Engineering, Faculty of Engineering, Shizuoka University
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Ohke Shigeaki
Department Of Electronic Engineering Faculty Of Engineering Shizuoka University
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Kuwahara Kazuhiro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shizuoka University
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Kuwahara Kazuhiro
Department Of Electronic Engineering Faculty Of Engineering Shizuoka University
関連論文
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- Structural Investigation of Metalorganic Chemical-Vapor-Deposition-Grown InGaAs Layers on Misoriented GaAs Substrates
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- Metalorganic Vapor Phase Epitaxy of InAs Layers on GaAs Substrates Using Low-Temperature Growth of InGaAs Graded Buffer Layers
- Waveguiding Characteristics of Optical Waveguide with Claddings Having Negative Nonlinear Refractive Coefficient
- Sublattice Rotation of GaP Grown on 2°-Misoriented Si Substrate Using Metalorganic Vapor Phase Epitaxy
- Threading Dislocations and Phase Separation in InGaAs Layers on GaAs Substrates Grown by Low-Temperature Metalorganic Vapor Phase Epitaxy
- Threading Dislocations in InGaAs CaP Layers with InGaAs Graded Layers Grown on Si Substrates
- Metalorganic Vapor Phase Epitaxy of InAs Layers on GaAs Substrates Using Low-Temperature Growth of InGaAs Graded Buffer Layers
- High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Double-Polarity Selective Area Growth of GaN Metal Organic Vapor Phase Epitaxy by Using Carbon Mask Layers
- Magneto-Optical Spectroscopy of Anatase TiO2 Doped with Co