High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
GaP was grown on misoriented Si substrates using metalorganic vapor phase epitaxy (MOVPE). At 700 and 800 °C, no mirror surface was obtained. A mirror surface was achieved at 830 °C with a high PH3 flow rate. The island nucleation density at the initial growth stage increased with temperature between 700 and 800 °C and saturated beyond 800 °C. Islands with a density of $10^{11}$ cm-2 nucleated at 830 °C. Cross-sectional transmission electron microscopy (c-TEM) shows that a 5-nm-thick GaP layer was formed by coalescence of the islands at 830 °C. A cross-hatched pattern (CHP) was observed for a 200-nm-thick GaP layer grown at 830 °C. The CHP indicates that the quality of the GaP layer was high. Cross-sectional TEM reveals that few stacking faults and dislocations exist in 5- and 40-nm-thick GaP layers on Si substrates.
- Japan Society of Applied Physicsの論文
- 2009-01-25
著者
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Takano Yasushi
Department Of Agricultural-environmental Biology Graduate School Of Agriculture And Life Sciences Th
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Fuke Shunro
Department Of Electrical & Electronic Engineering Shizuoka University
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Watanabe Satoshi
Department Of Agricultural Chemistry University Of Tokyo
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Furukawa Yuzo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Okamoto Takuya
Department Of Communications And Computer Engineering Graduate School Of Informatics Kyoto Universit
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Yonezu Hiroo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Kuwahara Kazuhiro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shizuoka University
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Masuda Hiroyuki
Department Of Applied Chemistry Faculty Of Engineering Gunma University
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Fukuda Shinya
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Ozeki Tomokazu
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Morizumi Kenta
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Noda Kunihiro
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Kuwahara Kazuhiro
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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